[timbre1234]

Do you want research or do you want an analogy? I can give you both. On the research front:

    "An Experimental Analysis of Erase-to-Program Interference in Multi-Level Cell NAND Flash Memories" by F. X. Zhang, et al., in IEEE Transactions on Electron Devices, vol. 63, no. 4, pp. 1621-1628, April 2016.

    "Erase-to-Program Disturbance in NAND Flash Memory: Characterization, Modeling, and Mitigation Techniques" by M. H. Kim, et al., in IEEE Transactions on Very Large Scale Integration (VLSI) Systems, vol. 25, no. 9, pp. 2381-2392, Sept. 2017.

    "A Study of Erase to Program Disturbance in 3D NAND Flash Memory" by T. Wang, et al., in IEEE Transactions on Electron Devices, vol. 64, no. 7, pp. 3153-3159, July 2017.

    "Characterization and Modeling of the Erase-to-Program Disturbance in Multi-Level Cell NAND Flash Memories" by R. Micheloni, et al., in IEEE Transactions on Electron Devices, vol. 56, no. 11, pp. 2384-2392, Nov. 2009.

[avianlyric]

Don’t suppose you could still provide the analogy. It’ll probably make it easier for me to understand the research as I only have a basic understanding of the physics at play here.