Far as I know, X-Ray lithography is even harder than EUV. Mostly because optical manipulation of X Rays barely exist, and X Rays only interact with heavier elements.
Current EUV sources from ASML are 13.5nm IIRC. It's increasingly difficult to do any kind of optics (focusing, masks, or even mirrors) at shorter wavelength.
6SixTy|1 year ago
unknown|1 year ago
[deleted]
phkahler|1 year ago