Both of these assertions are false, unless you can provide some appropriately limiting context. On-chip ESD countermeasures are microscopic, and often ablative — that is, they can become less effective with each exposure. Damage occurs most commonly at or near corners of conductors, and secondly between adjacent traces. The dielectric breakdown or material migration that occur, when not immediately catastrophic, may induce increased susceptibility, instability, or subtle changes in behaviour that are not easy to detect.
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