We know it can't be used in a fab because the mask in EUV scanners is in a hydrogen ambient to protect the optics and masks whereas the synchrotron is in a perfect vacuum. Now EUV has tons of problems with stochastics and as the wavelength decreases these errors increase. Second 13.5nm has optics with highest reflectivity which lower or higher wavelengths do not. It was tried by IBM but it failed and many in IBM and AMD's lithography team ended up at ASML.
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